Reduced base resistance in a bipolar transistor

ABSTRACT

According to a disclosed method, a dopant spike region is formed in a link base region, which connects an intrinsic base region to an extrinsic base region. For example, the intrinsic base region can be the region in which the base-emitter junction is formed in a silicon-germanium heterojunction bipolar transistor, and the extrinsic base region can be the external portion of the base of the same transistor to which external electrical contact is made. The dopant spike can be an increased concentration of boron dopant. A diffusion blocking segment is then fabricated on top of the link base region in order to prevent diffusion of the dopant spike out of the link base region. For example, the diffusion blocking segment can be formed from silicon-oxide. Thus, link base resistance is reduced, for example, by the higher concentration of boron dopant in the dopant spike region causing the link base resistance to be lower than the intrinsic base resistance. Moreover, a structure comprising a base region with reduced link base resistance can be fabricated according to the disclosed method.

This is a continuation of application Ser. No. 09/653,982 filed Sep. 1,2000.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the field of fabrication ofsemiconductor devices. More specifically, the invention relates to thefabrication of epitaxial base bipolar semiconductor devices.

2. Background Art

In an epitaxial base bipolar transistor, a thin layer of silicon, orsilicon-germanium, is grown as the base of a bipolar transistor on asilicon wafer. The epitaxial base bipolar transistor has significantadvantages in speed, frequency response, and gain when compared to aconventional implanted base silicon bipolar transistor. Speed andfrequency response can be compared by the cutoff frequency which, simplystated, is the frequency where the gain of a transistor is drasticallyreduced. More technically, the current gain approaches a value of one asthe frequency of operation of the transistor approaches the cutofffrequency. Cutoff frequencies in excess of 100 GHz have been achievedfor silicon-germanium epitaxial base bipolar transistors, which arecomparable to those achieved in more expensive GaAs devices. Previously,implanted base silicon bipolar transistors have not been competitive foruse where very high speed and frequency response are required.

The higher gain, speeds, and frequency response of the epitaxial basebipolar transistor have been achieved as a result of certain advantagesnot possible in implanted base silicon bipolar transistors, inparticular, the ability to incorporate silicon-germanium layers to forma heterojunction bipolar transistor (“HBT”). Silicon-germanium may beepitaxially grown on silicon wafers using conventional siliconprocessing and tools, and allows one to engineer device properties suchas the band gap, energy band structure, and mobilities. For example, itis known in the art that grading the concentration of germanium in thesilicon-germanium base builds into the HBT device an electric field,which accelerates the carriers across the base, thereby increasing thespeed of the HBT device compared to a silicon-only device. One methodfor fabricating silicon and silicon-germanium devices is by chemicalvapor deposition (“CVD”). A reduced pressure chemical vapor depositiontechnique, or RPCVD, used to fabricate the HBT device allows for acontrolled grading of germanium concentration across the base layer. Asalready noted, speeds in the range of approximately 100 GHz have beendemonstrated for silicon-germanium devices, such as the HBT.

Because the benefits of a high gain and high speed silicon-germanium HBTdevice can be either partially or completely negated by a high basecontact resistance, it is important that the resistance of the basecontact be kept low. In addition to providing low resistance in the basecontact, the geometry of the base region may necessitate providing a lowresistance electrical pathway through a portion of the base itselfbetween the base contact and the base-emitter junction. In order toprovide lower resistance from the base contact to the base-emitterjunction, the extrinsic base region is heavily doped by implantation (orextrinsic doping). The heavily doped extrinsic base region has a reducedresistance.

The region in the base between the edge of the heavily doped extrinsicbase region and the edge of the base-emitter junction is referred to asthe link base region. The link base region adds a significant amount ofresistance between the base contact and the base-emitter junction. Itis, therefore, important for the reasons stated above that resistance ofthe link region also be kept low. The resistance of the link base regionis affected by the distance across the link base region from the heavilydoped extrinsic base region to the edge of the base-emitter junction.Since the base-emitter junction is substantially coterminous with an“intrinsic base region,” the link base region spans a distance betweenthe intrinsic base region and the extrinsic base region. In other words,the link base region “links” the extrinsic base region to the intrinsicbase region. The distance across the link base region from the heavilydoped extrinsic base region to the intrinsic base region must be nosmaller than a certain minimum separation distance in order to provideseparation between the heavily doped region of the extrinsic base andthe heavily doped region of the emitter near the base-emitter junction.

The link base region itself is relatively lightly doped. If theseparation between the heavily doped region of the extrinsic base andthe heavily doped region of the emitter near the base-emitter junctionis not greater than a minimum separation distance, the two heavily dopedregions can form a high field junction and increase the leakage currentbetween the emitter and the base, thereby degrading the performancecharacteristics of the HBT device. Depending on the alignment of thesequence of steps in the fabrication process used to form the intrinsicbase region, to form the base-emitter junction, and to implant theheavily doped extrinsic base region, the distance across the link baseregion to the intrinsic base region can vary, often unpredictably. Withperfect alignment of the sequence of steps in the fabrication process,the distance across the link base region can be minimized to the minimumseparation distance just discussed. In that case, the link baseresistance would also be minimized. Accounting for the misalignment ofthe sequence of steps in the fabrication process, however, forces thefabrication of a much greater distance across the link base region thanthe minimum separation distance. Thus, the link base resistance isgreater than the minimum possible link base resistance.

It is important to provide a low resistance in the base contact, theheavily doped extrinsic base region, and the link base region in orderto allow the formation of an optimum low-resistance conduction path fromthe base contact to the intrinsic base region of the HBT or othersimilar device such as a conventional bipolar transistor. Because theresistances of the base contact, the heavily doped extrinsic baseregion, and the link base region are in series, the reduction of any oneof them will provide an improvement in the resistance of the conductionpath from the base contact to the base of the HBT or other similardevice.

Thus, there is need in the art to reduce the link base resistance. Thereis further need in the art to reduce the link base resistance withoutregard to the alignment of the sequence of steps in the fabricationprocess. There is also need in the art to reduce the link baseresistance without creating additional steps in the sequence of steps inthe fabrication process.

SUMMARY OF THE INVENTION

The present invention is directed to method for reducing base resistanceand related structure. The invention overcomes the need in the art toreduce the link base resistance. The invention also reduces the linkbase resistance without regard to the alignment of the sequence of stepsin the fabrication process. Further, the invention reduces the link baseresistance without creating additional steps in the fabrication process.

According to the invention, a dopant spike region is formed in a linkbase region, which connects an intrinsic base region to an extrinsicbase region. For example, the intrinsic base region can be the region inwhich the base-emitter junction is formed in a silicon-germaniumheterojunction bipolar transistor, and the extrinsic base region can bethe external portion of the base of the same transistor to whichexternal electrical contact is made. The dopant spike can be anincreased concentration of boron dopant.

A diffusion blocking segment is then fabricated on top of the link baseregion in order to prevent diffusion of the dopant spike out of the linkbase region. For example, the diffusion blocking segment can be formedfrom silicon-oxide. Thus, link base resistance is reduced, for example,by the higher concentration of boron dopant in the dopant spike regioncausing the link base resistance to be lower than the intrinsic baseresistance. Moreover, a structure comprising a base region with reducedlink base resistance can be fabricated according to the method of thepresent invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross sectional view of some of the features of anNPN HBT fabricated in accordance with one embodiment of the presentinvention.

FIG. 2 illustrates the relative concentrations of dopants and germaniumas a function of depth after completion of fabrication of an NPN HBT inaccordance with one embodiment of the present invention.

FIG. 3 illustrates the concentration of the boron spike region in an NPNHBT in accordance with one embodiment of the present invention.

FIG. 4 illustrates in greater detail a portion of the cross sectionalview of FIG. 1, and shows a cross sectional view of some of the featuresof an NPN HBT fabricated in accordance with one embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to a method for reducing baseresistance and related structure. The following description containsspecific information pertaining to the implementation of the presentinvention. One skilled in the art will recognize that the presentinvention may be implemented in a manner different from thatspecifically discussed in the present application. Moreover, some of thespecific details of the invention are not discussed in order to notobscure the invention. The specific details not described in the presentapplication are within the knowledge of a person of ordinary skill inthe art.

The drawings in the present application and their accompanying detaileddescription are directed to merely example embodiments of the invention.To maintain brevity, other embodiments of the invention which use theprinciples of the present invention are not specifically described inthe present application and are not specifically illustrated by thepresent drawings.

FIG. 1 shows a cross sectional view of various features and componentsof structure 100 which includes various features and components of anembodiment of the invention as described below. Certain details andfeatures have been left out which are apparent to a person of ordinaryskill in the art. Structure 100 includes collector 104, base 120, andemitter 130. Collector 104 is N-type single crystal silicon which can bedeposited epitaxially using an RPCVD process in a manner known in theart. Base 120 is P-type silicon-germanium single crystal depositedepitaxially in a “nonselective” RPCVD process. As seen in FIG. 1, base120 is situated on top of, and forms a junction with, collector 104.Base contact 121 is polycrystalline silicon-germanium depositedepitaxially in a “nonselective” RPCVD process. Base 120 and base contact121 connect with each other at interface 122 between the contactpolycrystalline material and the base single crystal material. Emitter130, which is situated above and forms a junction with base 120, iscomprised of N-type polycrystalline silicon. Collector 104, base 120,and emitter 130 thus form a heterojunction bipolar transistor (“HBT”)which is generally referred to by numeral 150 in FIG. 1.

As seen in FIG. 1, buried layer 102, which is composed of N+ typematerial meaning—that it is relatively heavily doped N-type material—isformed in silicon substrate 101 in a manner known in the art. Collectorsinker 106, also composed of N+ type material, is formed by diffusion ofheavily concentrated dopants from the surface of collector sinker 106down to buried layer 102. Buried layer 102, along with collector sinker106, provide a low resistance electrical pathway from collector 104through buried layer 102 and collector sinker 106 to a collector contact(the collector contact is not shown in any of the Figures). Deep trench108 structures and field oxide 110 structures composed of silicon oxide(SiO₂) material are formed in a manner known in the art. Deep trench 108and field oxide 110 structures provide electrical isolation from otherdevices on silicon substrate 101 in a manner known in the art.

Dielectric segments 140, which can be composed of silicon oxide, provideelectrical isolation to emitter 130 from base 120. Dielectric segments140 are also referred to as “diffusion blocking segments” in the presentapplication. Dielectric segments 140 also maintain the concentration ofboron spike region 126 according to one embodiment of the invention asfurther described below. Boron spike region 126 is also referred to as“dopant spike region” in the present application. The region enclosed bydashed line 160 is illustrated in detail as structure 460 in FIG. 4,which is discussed further in relation to FIG. 4.

By way of background, characteristics and functionality of HBT 150 areaffected and can be tailored by varying the steps of the fabricationprocess. One useful tool for controlling the resultant performancecharacteristics of HBT 150 is the dopant and silicon-germanium profile.It is desirable to accurately control the dopant and silicon-germaniumprofile of HBT 150 to achieve a desired HBT performance.

Graph 200 in FIG. 2 depicts dopant concentration profile and germaniumconcentration profile prior to introducing a “boron spike” which, asdescribed in more detail in relation to FIGS. 3 and 4, reduces the linkbase resistance. FIG. 2 shows graph 200 having dopant concentration axis205, in atoms per cubic centimeter. Graph 200 also shows separategermanium concentration axis 215, in atoms per cubic centimeter. Bothdopant concentration axis 205 and germanium concentration axis 215 areplotted against depth axis 210, measured in nanometers of depth from thetop surface of HBT 150. As seen in graph 200 of FIG. 2, down to depth ofapproximately 190.0 nanometers corresponds to emitter 130 of HBT 150.This depth, i.e. the depth corresponding to emitter 130, is marked bydashed line 230 in graph 200 to indicate that the area between dashedline 230 and dopant concentration axis 205 corresponds to emitter 130 inFIG. 1.

Additionally, as seen in graph 200 of FIG. 2, down to depth ofapproximately 150.0 nanometers corresponds to polycrystalline siliconportion of emitter 130 of HBT 150. This depth, i.e. the depthcorresponding to emitter polycrystalline silicon 130, is marked bydashed line 231 in graph 200 to indicate that the area between dashedline 231 and dopant concentration axis 205 corresponds to emitterpolycrystalline silicon 130.

Also, as seen in graph 200 of FIG. 2, from depth of approximately 190.0nanometers down to depth of approximately 295.0 nanometers correspondsto the base of HBT 150. This base was shown as base 120 in HBT 150 inFIG. 1. This depth, i.e. the depth corresponding to base 120, is markedby dashed line 230 and by dashed line 233 to indicate that the areabetween dashed line 230 and dashed line 233 corresponds to base 120 inFIG. 1.

Further, as seen in graph 200 of FIG. 2, from depth of approximately295.0 nanometers downward corresponds to the collector of HBT 150. Thecollector was shown as collector 104 in HBT 150 in FIG. 1. This depth,i.e. the depth corresponding to collector 104, is marked by dashed line233 to indicate that the area between dashed line 233 and germaniumconcentration axis 215 corresponds to collector 104 in FIG. 1.

Also, as seen in graph 200 of FIG. 2, from depth of approximately 295.0nanometers down to depth of approximately 325.0 nanometers correspondsto silicon seed layer 236, discussed in more detail below, in thecollector of HBT 150. For simplicity, this silicon seed layer is notshown in FIG. 1. The depth corresponding to silicon seed layer 236 ismarked by dashed line 233 and by dashed line 235 and by the words “seedlayer” to indicate that the area between dashed line 233 and dashed line235 corresponds to silicon seed layer 236.

Germanium concentration curve 220 represents the concentration profilefor germanium, and corresponds to germanium concentration axis 215.Boron concentration curve 222 represents the concentration profile forboron, and corresponds to dopant concentration axis 205. Arsenicconcentration curve 224 represents the concentration profile forarsenic, and also corresponds to dopant concentration axis 205. A secondarsenic concentration curve 228 also represents the concentrationprofile for arsenic, and also corresponds to dopant concentration axis205.

By understanding characteristic growth rates for silicon andsilicon-germanium according to temperature, pressure, flow rate, and theeffect of doping and dopants, as well as the effect of strain resultingfrom the epitaxial growth of silicon-germanium on top of silicon due tothe difference between the two materials, the process of achieving thedesired pre-determined profile can be controlled in order to produce amultilayer collector-base-emitter stack with the desired profile.

Referring to FIG. 1, the portion of multilayer stack structurecomprising collector 104, base 120, and emitter 130 is formed as aresult of several processes. Collector 104 can be formed by epitaxialdeposition of silicon over silicon buried layer 102. Formation ofcollector 104 includes arsenic doping which results in an N-type layer.Formation of collector 104 can include additional arsenic or phosphorousimplant doping to further raise the dopant concentration of collector104 to typical levels between 110¹⁶ per cubic centimeter and 510¹⁷ percubic centimeter. As stated above, the collector region is shown ingraph 200 as the region confined between dashed line 233 and germaniumconcentration axis 215. By referring to dopant concentration axis 205and arsenic concentration curve 228 in graph 200 it is seen that arsenicatoms have a concentration of approximately 510¹⁶ atoms per cubiccentimeter in the collector region. It is also seen in graph 200 thatboron atoms have a negligible concentration in the collector region.Accordingly, collector 104 is an “N-type” single crystal silicon.

Silicon seed layer 236 is formed in the region near the top of collector104 to maintain good crystallinity to aid growth of silicon-germaniumabove collector 104. Silicon-germanium, which will form part of base120, is grown by epitaxy on top of the silicon seed layer. Theconcentration of germanium in the silicon-germanium layer comprisingbase 120 is graded by depth in the layer. As stated above, silicon seedlayer 236 is shown in graph 200 as the region confined between dashedline 233 and dashed line 235. For simplicity, silicon seed layer 236 isnot shown in structure 100 of FIG. 1.

As stated above, base region is shown in graph 200 as the regionconfined between dashed line 230 and dashed line 233. Thus, in thepresent embodiment, the base region covers a depth of approximately190.0 nanometers down to approximately 295.0 nanometers. By referring todopant concentration axis 205 and arsenic concentration curve 224 ingraph 200 it is seen that arsenic atoms have a negligible concentrationbelow approximately 510¹⁷ atoms per cubic centimeter in the baseregion. By referring to dopant concentration axis 205 and boronconcentration curve 222, it is also seen that boron atoms have aconcentration ranging from approximately 110¹⁶ to 110¹⁸ atoms percubic centimeter. This concentration of boron atoms renders base 120,which is confined to a depth of approximately 190.0 nanometers to adepth of approximately 295.0 nanometers, a “P-type” base.

Dashed line 230 in graph 200, which marks the upper end of base 120 at adepth of approximately 190.0 nanometers in HBT 150, also corresponds tothe emitter-base junction of HBT 150. A single crystal “silicon cap”occupies the region from slightly below the emitter-base junction, whichis at a depth of approximately 190.0 nanometers, to a depth ofapproximately 150.0 nanometers indicated by dashed line 231 in graph200, which is inside the emitter region.

The emitter region is shown in graph 200 as the region confined betweendashed line 230 and dopant concentration axis 205. Thus, in the presentembodiment, the emitter region covers a depth of approximately 100.0nanometers down to approximately 190.0 nanometers. It is seen fromarsenic concentration curve 224 in graph 200 that arsenic atoms have aconcentration ranging from approximately 510¹⁷ to approximately 510²⁰atoms per cubic centimeter in emitter 130 of HBT 150. It is also seenfrom boron concentration curve 220 in graph 200 that boron atoms have aconcentration ranging from approximately 110¹⁷ to 510¹⁷ atoms percubic centimeter. This concentration of boron atoms in the emitter ismuch smaller than the concentration of arsenic atoms in the emitter. Assuch, the emitter region is an “N-type” region. The base-emitterjunction, identified by dashed line 230 in graph 200, occurs just abovethe lower end of the single crystal silicon cap. As stated above, thesingle crystal silicon cap, which includes the base-emitter junction,spans from a depth slightly below dashed line 230 and up to dashed line231.

By way of background, during a chemical vapor deposition (“CVD”) processused for epitaxially growing silicon, a gas containing a precursor forsilicon flows across the silicon surface. For CVD processes, hydridesare usually used as these precursors. For example, for silicon theprecursor is SiH₄. The precursor, such as SiH₄, is subjected to hightemperatures. The precursor molecule, in this example SiH₄, usuallyattaches to an available silicon site. The silicon-hydrogen bond of theprecursor hydride, at high enough temperature, will break apart. Sogiven enough heat energy the hydrogen-silicon bonds break, the hydrogenis desorbed, and the silicon stays behind. Doping of the epitaxialgrowth is achieved by adding a precursor for dopant to the gas flowacross the silicon surface during the deposition process. For CVDprocesses, hydrides are also usually used as these precursors. Forexample, for boron the precursor is B₂H₆. The dopants becomeincorporated into the growing silicon when the hydrogen is desorbed. Inone embodiment of the invention precursors containing germanium, forexample GeH₄, as well as precursors containing silicon, for exampleSiH₄, and precursors containing boron, for example B₂H₆ are used to growan epitaxial silicon-germanium P-type crystal in base 120 of the HBT150.

FIG. 3 shows graph 300 having dopant concentration axis 305, in atomsper cubic centimeter. Dopant concentration axis 305 is plotted againstdepth axis 310, measured in nanometers of depth from the top surface ofthe single crystal silicon cap of HBT 150, i.e. from a depth ofapproximately 150.0 nanometers as shown in FIG. 3. As seen in graph 300of FIG. 3, the concentration of boron dopant during the epitaxialdeposition of silicon and silicon-germanium is held constant from themaximum depth where boron dopant is added almost to the top surface ofthe single crystal silicon cap. This concentration, i.e. the constantlevel of boron, is marked by horizontal line 320 in graph 300 toindicate that portion of the deposition process where the concentrationof boron is held constant. As indicated on graph 300, a typical valuefor the constant boron concentration is 210¹⁸ atoms per cubiccentimeter. The value may vary, however, in a range from approximately110¹⁸ to approximately 510¹⁹ atoms per cubic centimeter.

Also as seen in graph 300 of FIG. 3, the concentration of boron dopantduring the epitaxial deposition of silicon and silicon-germanium issharply increased in the region just below the top surface of the singlecrystal silicon cap to the top surface of the single crystal siliconcap. This concentration, i.e. the sharply increased concentration ofboron, is marked by horizontal line 326 in graph 300 to indicate thatportion of the deposition process where the concentration of boron issharply increased. The sharply increased concentration of boron justbelow the top surface of the single crystal silicon cap up to the topsurface of the single crystal silicon cap is referred to as “boronspike.” As shown in FIG. 3, the boron spike region occupies a depth ofapproximately 150.0 nanometers. It is noted again, that graph 200 inFIG. 2 illustrated the boron concentration prior to the introduction ofthe boron spike shown in FIG. 3. As such, boron concentration curve 222did not depict the boron spike shown in FIG. 3.

As indicated by graph 300, the value for boron concentration in theboron spike region is approximately 510¹⁸ to approximately 110²⁰ atomsper cubic centimeter, according to one embodiment of the presentinvention. Thus, in an embodiment where the boron concentration levelmarked by line 320 is approximately 210¹⁸, the ratio of the boronconcentration inside the boron spike region to the boron concentrationoutside the boron spike region indicated by line 320 can be as high as50.0. It is noted that prior to the present invention, the process ofboron doping in the fabrication of HBT 150 did not include the formationof boron spike just below the top surface of the single crystal siliconcap. Boron concentration curve 222 in FIG. 2 shows concentration profilefor boron resulting from the previous process, i.e. the process prior tothe present invention.

Almost all of the sharply increased concentration of boron in the“intrinsic base region” of base 120 (the intrinsic base region isdiscussed in more detail in relation to FIG. 4 below) diffuses out intoemitter polycrystalline silicon 130 which covers a portion of the topsurface of the single crystal silicon cap, and almost none of thesharply increased concentration of boron diffuses back into the singlecrystal region in the emitter area or the base-emitter junction area ofthe silicon cap or the intrinsic base region. Thus, in the singlecrystal region in the emitter and base-emitter junction area of thesilicon cap and the intrinsic base region of base 120, boron spikeeffectively disappears through the process of diffusion into emitterpolycrystalline silicon 130. Thus, the formation of boron spike has nosubstantial effect on the dopant profile in the emitter and emitter-basejunction area of the silicon cap or in intrinsic base region of base 120of HBT 150. A substantial increase of boron concentration in the boronprofile in the emitter-base junction area of the silicon cap or inintrinsic base region of base 120 of HBT 150 could, for example, havethe undesirable effect of reducing the gain and the cutoff frequency ofHBT 150.

FIG. 4 shows a more detailed cross sectional view of selected featuresand components of structure 100 of FIG. 1. In particular, portions ofemitter 130, base 120, and dielectric segments 140 enclosed by dashedline 160 in FIG. 1 are shown respectively as emitter 430, base 420, anddielectric segment 440 in structure 460 in FIG. 4. FIG. 4 shows emitter430 and “out-diffusion area” 432 formed by the out-diffusion of N+dopants from the polycrystalline silicon emitter 430 into the singlecrystal layer therebelow. As seen in FIG. 4, emitter 430 is situatedabove the N+ out-diffusion area.

As seen in FIG. 4, dielectric segment 440 is situated above singlecrystal link base region 423. In one embodiment, dielectric segment 440can be silicon oxide. Single crystal N+ out-diffusion area 432 issituated above single crystal intrinsic base region 427. Extrinsic baseregion 425, link base region 423, and intrinsic base region 427 comprisebase 420. The base-emitter junction is formed within the single crystallayer at the boundary of N+ out-diffusion area 432 and intrinsic baseregion 427.

Continuing with FIG. 4, N+ out-diffusion area 432 of the single crystallayer is formed by out-diffusion of heavy concentration of arsenicdopants after ion implantation doping of emitter polycrystalline silicon430. The N+ doping renders emitter 430 an N-type emitter. Ionimplantation of extrinsic base region 425 has resulted in the heavilydoped P+ implanted region 429 within extrinsic base region 425. In oneembodiment, the dopant used to form implanted region 429 can be boron.The heavy doping in implanted region 429 lowers the overall resistanceof extrinsic base region 425. The overall base resistance of HBT 150 isthereby improved by lowering the contribution of extrinsic base region425 to the series resistance of the path from the base contact, throughthe base contact, heavily doped extrinsic base region 425, and link baseregion 423 to intrinsic base region 427.

Continuing with FIG. 4, boron spike region 426, which corresponds toboron spike region 126 of FIG. 1, is formed according to one embodimentof the present invention as follows. Initially a boron spike, whosedopant concentration is represented in FIG. 3 by horizontal line 326 ingraph 300, occurs over the entire top surface of single crystal siliconcap, only a portion of which is covered by emitter polycrystallinesilicon 430. Another portion of the top surface of single crystalsilicon cap is covered by dielectric segment 440. Almost none of thesharply increased concentration of boron diffuses out of the silicon capfrom the top surface of link base region 423. This is in contrast to thetop surface of intrinsic base region 427 where emitter 430, instead ofdielectric segment 440, covers the top surface of the single crystalsilicon cap. The boron spike diffuses out from the top surface ofintrinsic base region 427 into emitter 430. As such, the boron spikeregion 426 is confined to base link region 423 as shown in FIG. 4.

The boron spike remains near the top surface of the single crystalsilicon cap forming boron spike region 426 in the areas covered by thedielectric segments 440, which coincide with the link base region 423 ofbase 420. Thus, boron spike region 426 is formed in link base region423, but not in intrinsic base region 427.

Without boron spike region 426, link base region 423 is a relativelylightly doped P-type crystal with boron concentration profile similar tothat of intrinsic base region 427. The addition of boron spike region426 to link base region 423, increases the P-type doping of a portion oflink base region 423, thereby lowering the overall resistance of linkbase region 423. The overall resistance of link base region 423 is alsoreferred to as “link base resistance” in this application. The overallresistance of intrinsic base region 427, or “intrinsic base resistance,”is not affected. The lower link base resistance improves the overallbase resistance by lowering the link base region 423 contribution to theseries resistance of the path from the base contact through extrinsicbase region 425 and link base region 423 to intrinsic base region 427.

The effect of boron spike region 426 on link base resistance is inproportion to the ratio of the concentration of boron in boron spikeregion 426 to the constant boron concentration in link base region 423,as discussed above. Thus, according to one embodiment of the presentinvention the link base resistance is reduced by a factor of as much as50 times. In units of ohm-microns, and depending on the actual device,the previous typical values for link base resistance translate to arange of approximately 1,000.0 ohm-microns. According to one embodimentof the present invention, typical values for link base resistance arereduced to values as low as approximately 20.0 ohm-microns.

The lowered resistance of link base region 423 reduces the need,discussed above, to minimize the distance across the link base region tothe intrinsic base region which required perfect alignment of thesequence of steps in the fabrication process used to form the intrinsicbase region, to form the base-emitter junction, and to form a heavilyimplanted region of the extrinsic base region. Efforts to improve thealignment of the sequence of steps in the fabrication process haveinvolved additional steps in the fabrication process. The additionalsteps incur additional costs in terms of decreased throughput of theoverall fabrication process. One advantage of an embodiment of thepresent invention described here is that boron spike area 426 does notinvolve the addition of any extra process steps. Thus, one embodiment ofthe present invention improves base resistance and maintains highthroughput of the fabrication process.

It is appreciated by the above detailed disclosure that the inventionprovides a method for reducing base resistance and related structure.Using the invention, base resistance in an HBT can be controlled andreduced. Although the invention is described as applied to theconstruction of a heterojunction bipolar transistor, it will be readilyapparent to a person of ordinary skill in the art how to apply theinvention in similar situations where control is needed to reduce baseresistance without affecting the profile of the epitaxial single crystalintrinsic base.

From the above description of the invention it is manifest that varioustechniques can be used for implementing the concepts of the presentinvention without departing from its scope. For example, although theCVD process used in the particular embodiment of the present inventiondescribed here is the reduced pressure, or RPCVD, other types of CVDtechniques known in the art could be used without departing from thescope of the present invention. Moreover, while the invention has beendescribed with specific reference to certain embodiments, a person ofordinary skills in the art would recognize that changes can be made inform and detail without departing from the spirit and the scope of theinvention. For example, although dielectric segments 140 used asdiffusion blocking segments can, in one embodiment, be silicon oxide,they can also be comprised of one or more of additional or differenttypes of dielectrics. The described embodiments are to be considered inall respects as illustrative and not restrictive. It should also beunderstood that the invention is not limited to the particularembodiments described herein, but is capable of many rearrangements,modifications, and substitutions without departing from the scope of theinvention.

Thus, a method for reducing base resistance and related structure havebeen described.

What is claimed is:
 1. A structure comprising: a base having a link baseregion, an intrinsic base region, and an extrinsic base region, saidlink base region connecting said intrinsic base region to said extrinsicbase region, said link base region having a link base resistance, saidintrinsic base region having an intrinsic base resistance; said linkbase region having a dopant spike region, said dopant spike regioncausing said link base resistance to be lower than said intrinsic baseresistance.
 2. The structure of claim 1 further comprising a diffusionblocking segment situated on top of said link base region, saiddiffusion blocking segment preventing diffusion of said dopant spikeregion out of said link base region.
 3. The structure of claim 1 furthercomprising an emitter situated on top of said intrinsic base region,said emitter permitting diffusion of said dopant spike region out ofsaid intrinsic base region.
 4. The structure of claim 1 wherein saidlink base resistance is approximately 20.0 ohm-microns.
 5. The structureof claim 1 wherein said base is in a silicon-germanium heterojunctionbipolar transistor.
 6. The structure of claim 1 wherein said base is inan epitaxial base bipolar transistor.
 7. The structure of claim 1wherein said dopant spike region comprises boron.
 8. The structure ofclaim 1 wherein said dopant spike region comprises boron at aconcentration between 510¹⁸ and 110²⁰ atoms per cubic centimeter.
 9. Astructure comprising: a link base region connected to an intrinsic baseregion, said intrinsic base region having an intrinsic base resistance,said link base region having a link base resistance; a diffusionblocking segment situated on top of said link base region said link baseregion having a dopant spike region below said diffusion blockingsegment, said dopant spike region causing said link base resistance tobe lower than said intrinsic base resistance, said diffusion blockingsegment preventing diffusion of said dopant spike region out of saidlink base region.
 10. The structure of claim 9 further comprising anemitter situated on top of said intrinsic base region, said emitterpermitting diffusion of said dopant spike region out of said intrinsicbase region.
 11. The structure of claim 9 further comprising anextrinsic base region, said extrinsic base region being connected tosaid intrinsic base region by said link base region.
 12. The structureof claim 9 wherein said dopant spike region comprises boron.
 13. Thestructure of claim 9 wherein said dopant spike region comprises boron ata concentration between 510¹⁸ and 1⊃10²⁰ atoms per cubic centimeter.14. The structure of claim 9 wherein said link base resistance isapproximately 20.0 ohm-microns.
 15. The structure of claim 9 wherein abase in a silicon-germanium heterojunction bipolar transistor comprisessaid link base region and said intrinsic base region.
 16. A structurecomprising: a base having a link base region, an intrinsic base region,and an extrinsic base region, said link base region connecting saidintrinsic base region to said extrinsic base region, said link baseregion having a link base resistance, said intrinsic base region havingan intrinsic base resistance; a diffusion blocking segment situated ontop of said link base region; an emitter situated on top of saidintrinsic base region; said link base region having a dopant spikeregion below said diffusion blocking segment, said dopant spike regioncausing said link base resistance to be lower than said intrinsic baseresistance, said diffusion blocking segment preventing diffusion of saiddopant spike region out of said link base region.
 17. The structure ofclaim 16 wherein said dopant spike region comprises boron.
 18. Thestructure of claim 16 wherein said dopant spike region comprises boronat a concentration between 510¹⁸ and 110²⁰ atoms per cubic centimeter.19. The structure of claim 16 wherein said link base resistance isapproximately 20.0 ohm-microns.
 20. The structure of claim 16 whereinsaid base is in a silicon-germanium heterojunction bipolar transistor.21. The structure of claim 16 wherein said base is in an epitaxial basebipolar transistor.
 22. The structure of claim 16 wherein said diffusionblocking segment comprises silicon oxide.